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Feng Li

Orcid: 0000-0001-9697-5002

According to our database1, Feng Li authored at least 2 papers between 2024 and 2025.

Collaborative distances:
  • Dijkstra number2 of seven.
  • Erdős number3 of six.

Timeline

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Links

Online presence:

On csauthors.net:

Bibliography

2025
Simulation of E-Mode β -Ga<sub>2</sub>O<sub>3</sub> Interlayer-Based Vertical Trench Power MOSFET With Fast-Switching Performance at High Temperatures.
[BibTeX]
[DOI]
Xiaoqing Chen
,
Feng Li
,
Herbert Hess
IEEE Access, 2025

2024
Design of Enhancement Mode β-Ga₂O₃ Vertical Current Aperture MOSFETs With a Trench Gate.
[BibTeX]
[DOI]
Xiaoqing Chen
,
Feng Li
,
Herbert Hess
IEEE Access, 2024


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