Parallel Simulation of Semiconductor Devices. - John R. Barker; Asen Asenov; Andrew R. Brown; J. Cluckie; S. Babiker; Clinton R. Arokianathan (EUROSIM, 1994)

Speed-Up of Scalable Iterative Linear Solvers Implemented on an Array of Transputers. - Asen Asenov; Dave Reid; John R. Barker (Parallel Comput., 1994)

A Virtual IC Factory in an Undergraduate Semiconductor Device Fabrication Laboratory. - A. Asenov; C. R. Stanley (EUROSIM, 1995)

Optimum partitioning of topologically rectangular grids. - Scott Roy; Asen Asenov; John R. Barker (EUROSIM, 1996)

Scalable parallel 3D finite element nonlinear Poisson solver. - Asen Asenov; John R. Barker; Andrew R. Brown; G. L. Lee (Simul. Pract. Theory, 1996)

A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices. - Clinton R. Arokianathan; Asen Asenov; John H. Davies (VLSI Design, 1998)

Ab-initio Coulomb Scattering in Atomistic Device Simulation. - Clinton R. Arokianathan; John H. Davies; Asen Asenov (VLSI Design, 1998)

Monte Carlo Calibrated Drift-Diffusion Simulation of Short Channel HFETs. - Asen Asenov; S. Babiker; S. P. Beaumont; John R. Barker (VLSI Design, 1998)

Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices. - Asen Asenov; Andrew R. Brown; Scott Roy; John R. Barker (VLSI Design, 1998)

Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs. - S. Babiker; Asen Asenov; John R. Barker; S. P. Beaumont (VLSI Design, 1998)

Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation. - S. Babiker; Asen Asenov; Norman Cameron; S. P. Beaumont; John R. Barker (VLSI Design, 1998)

3D Parallel Finite Element Simulation of In-Cell Breakdown in Lateral-Channel IGBTs. - Andrew R. Brown; Asen Asenov; John R. Barker (VLSI Design, 1998)

RF Performance of Si/SiGe MODFETs: A Simulation Study. - Sumit Roy; Asen Asenov; S. Babiker; John R. Barker; S. P. Beaumont (VLSI Design, 1998)

Hierarchical approach to "atomistic" 3-D MOSFET simulation. - Asen Asenov; Andrew R. Brown; John H. Davies; Subhash Saini (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 1999)

Quantum Corrections to the 'Atomistic' MOSFET Simulations. - Asen Asenov; Gabriela Slavcheva; Savas Kaya; R. Balasubramaniam (VLSI Design, 2001)

IWCE-7 Committees. - John R. Barker; Asen Asenov (VLSI Design, 2001)

Scaling of pHEMTs to Decanano Dimensions. - Karol Kalna; Asen Asenov; K. Elgaid; Iain Thayne (VLSI Design, 2001)

Soft Sphere Model for Electron Correlation and Scattering in the Atomistic Modelling of Semiconductor Devices. - Jeremy R. Watling; John R. Barker; Asen Asenov (VLSI Design, 2001)

Non-Equilibrium Hole Transport in Deep Sub-Micron Well-Tempered Si p-MOSFETs. - Jeremy R. Watling; Yan P. Zhao; Asen Asenov; John R. Barker (VLSI Design, 2001)

Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: a Monte Carlo simulation study. - Karol Kalna; Asen Asenov (Math. Comput. Simul., 2003)

The impact of random doping effects on CMOS SRAM cell. - Binjie Cheng; Scott Roy; Asen Asenov (ESSCIRC, 2004)

Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. - L. Yang; Asen Asenov; Jeremy R. Watling; M. Boriçi; John R. Barker; Scott Roy; K. Elgaid; Iain Thayne; T. Hackbarth (Microelectron. Reliab., 2004)

A High-Performance Parallel Device Simulator for High Electron Mobility Transistors. - Natalia Seoane; Antonio J. García-Loureiro; Karol Kalna; Asen Asenov (PARCO, 2005)

Towards a Grid-Enabled Simulation Framework for Nano-CMOS Electronics. - Liangxiu Han; Asen Asenov; Dave Berry; Campbell Millar; Gareth Roy; Scott Roy; Richard O. Sinnott; Gordon Stewart 002 (eScience, 2007)

The scalability of 8T-SRAM cells under the influence of intrinsic parameter fluctuations. - Binjie Cheng; Scott Roy; A. Asenov (ESSCIRC, 2007)

Statistical Device Variability and its Impact on Yield and Performance. - Asen Asenov (IOLTS, 2007)

Secure, Performance-Oriented Data Management for nanoCMOS Electronics. - Richard O. Sinnott; Christopher Bayliss; C. Davenhall; Bruno Harbulot; Mike Jones 002; Campbell Millar; Gareth Roy; Scott Roy; Gordon Stewart 002; John P. Watt; Asen Asenov (eScience, 2008)

Integrating Security Solutions to Support nanoCMOS Electronics Research. - Richard O. Sinnott; Christopher Bayliss; Thomas Doherty; David B. Martin; Campbell Millar; Gordon Stewart 002; John P. Watt; Asen Asenov; Gareth Roy; Scott Roy; C. Davenhall; Bruno Harbulot; et al. (ISPA, 2008)

Supercomputing at Work in the nanoCMOS Electronics Domain. - Richard O. Sinnott; Campbell Millar; Asen Asenov (ERCIM News, 2008)

Statistical aspects of reliability in bulk MOSFETs with multiple defect states and random discrete dopants. - Muhammad Faiz Bukhori; Scott Roy; Asen Asenov (Microelectron. Reliab., 2008)

Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. - Urban Kovac; Dave Reid; Campbell Millar; Gareth Roy; Scott Roy; Asen Asenov (Microelectron. Reliab., 2008)

Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability. - Noor Ain Kamsani; Binjie Cheng; Scott Roy; Asen Asenov (ISCAS, 2009)

Enabling Cutting-Edge Semiconductor Simulation through Grid Technology. - Asen Asenov; Dave Reid; Campbell Millar; Scott Roy; Gareth Roy; Richard O. Sinnott; Gordon Stewart 002; Graeme Robert Stewart (LSSC, 2009)

Modeling and simulation of transistor and circuit variability and reliability. - Asen Asenov; Binjie Cheng; Daryoosh Dideban; Urban Kovac; Negin Moezi; Campbell Millar; Gareth Roy; Andrew R. Brown; Scott Roy (CICC, 2010)

Capturing intrinsic parameter fluctuations using the PSP compact model. - Binjie Cheng; Daryoosh Dideban; Negin Moezi; Campbell Millar; Gareth Roy; Xingsheng Wang; Scott Roy; Asen Asenov (DATE, 2010)

Statistical NBTI-effect prediction for ULSI circuits. - Tong Boon Tang; Alan F. Murray; Binjie Cheng; Asen Asenov (ISCAS, 2010)

Advanced Monte Carlo Techniques in the Simulation of CMOS Devices and Circuits. - Asen Asenov (NMA, 2010)

Statistical-Variability Compact-Modeling Strategies for BSIM4 and PSP. - Binjie Cheng; Daryoosh Dideban; Negin Moezi; Campbell Millar; Gareth Roy; Xingsheng Wang; Scott Roy; Asen Asenov (IEEE Des. Test Comput., 2010)

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architectures. - Brahim Benbakhti; J. S. Ayubi-Moak; Karol Kalna; D. Lin; Geert Hellings; Guy Brammertz; Kristin De Meyer; Iain Thayne; Asen Asenov (Microelectron. Reliab., 2010)

Statistical aspects of NBTI/PBTI and impact on SRAM yield. - Asen Asenov; Andrew R. Brown; Binjie Cheng (DATE, 2011)

Modelling circuit performance variations due to statistical variability: Monte Carlo static timing analysis. - Michael Merrett; Plamen Asenov; Yangang Wang; Mark Zwolinski; Dave Reid; Campbell Millar; Scott Roy; Zhenyu Liu; Stephen B. Furber; Asen Asenov (DATE, 2011)

New reliability mechanisms in memory design for sub-22nm technologies. - Nivard Aymerich; A. Asenov; Andrew R. Brown; Ramon Canal; Binjie Cheng; Joan Figueras; Antonio González 001; Enric Herrero; S. Markov; Miguel Miranda; Peyman Pouyan; Tanausú Ramírez; et al. (IOLTS, 2011)

The evolution of standard cell libraries for future technology nodes. - James Alfred Walker; James A. Hilder; Dave Reid; Asen Asenov; Scott Roy; Campbell Millar; Andy M. Tyrrell (Genet. Program. Evolvable Mach., 2011)

TRAMS Project: Variability and Reliability of SRAM Memories in sub-22 nm Bulk-CMOS Technologies. - Ramon Canal; Antonio Rubio 001; A. Asenov; A. Brown; Miguel Miranda; Paul Zuber; Antonio González 001; Xavier Vera (FET, 2011)

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors. - Antonio J. García-Loureiro; Natalia Seoane; Manuel Aldegunde; Raúl Valín Ferreiro; Asen Asenov; Antonio Martinez; Karol Kalna (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2011)

Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation. - Salvatore M. Amoroso; Louis Gerrer; Stanislav Markov; Fikru Adamu-Lema; Asen Asenov (ESSDERC, 2012)

An advanced statistical compact model strategy for SRAM simulation at reduced VDD. - Plamen Asenov; Dave Reid; Scott Roy; Campbell Millar; Asen Asenov (ESSDERC, 2012)

Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. - Xingsheng Wang; Binjie Cheng; Andrew R. Brown; Campbell Millar; Asen Asenov (ESSDERC, 2012)

Analysis of FinFET technology on memories. - Esteve Amat; A. Asenov; Ramon Canal; Binjie Cheng; J.-Ll. Cruz; Zoran Jaksic; Miguel Miranda; Antonio Rubio 001; Paul Zuber (IOLTS, 2012)

A framework to study time-dependent variability in circuits at sub-35nm technology nodes. - Tong Boon Tang; Alan F. Murray; Binjie Cheng; Asen Asenov (ISCAS, 2012)

Accurate capturing of the statistical aspect of NBTI/PBTI variability into statistical compact models. - Muhammad Faiz Bukhori; Noor Ain Kamsani; Asen Asenov; Nazrul Anuar Nayan (Microelectron. J., 2012)

ICMAT 2011 - Reliability and variability of semiconductor devices and ICs. - Asen Asenov; Ulf Schlichtmann; Cher Ming Tan; Hei Wong; Xing Zhou (Microelectron. Reliab., 2012)

Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. - Louis Gerrer; Stanislav Markov; Salvatore M. Amoroso; Fikru Adamu-Lema; Asen Asenov (Microelectron. Reliab., 2012)

Predicting future technology performance. - Asen Asenov; Craig Alexander; Craig Riddet; Ewan Towie (DAC, 2013)

Investigation of SRAM using BTI-aware statistical compact models. - Jie Ding; Dave Reid; Campbell Millar; Asen Asenov (ESSDERC, 2013)

Multi-scale computational framework for the evaluation of variability in the programing window of a flash cell with molecular storage. - Vihar P. Georgiev; Stanislav Markov; Laia Vila-Nadal; Cristoph Busche; Leroy Cronin; Asen Asenov (ESSDERC, 2013)

Impact of statistical variability and charge trapping on 14 nm SOI FinFET SRAM cell stability. - Xingsheng Wang; Binjie Cheng; Andrew R. Brown; Campbell Millar; Jente B. Kuang; Sani R. Nassif; Asen Asenov (ESSDERC, 2013)

Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models. - Plamen Asenov; David New; Dave Reid; Campbell Millar; Scott Roy; Asen Asenov (ICICDT, 2013)

SRAM device and cell co-design considerations in a 14nm SOI FinFET technology. - Binjie Cheng; Xingsheng Wang; Andrew R. Brown; Jente B. Kuang; Dave Reid; Campbell Millar; Sani R. Nassif; Asen Asenov (ISCAS, 2013)

Statistical Variability and Reliability and the Impact on Corresponding 6T-SRAM Cell Design for a 14-nm Node SOI FinFET Technology. - Xingsheng Wang; Binjie Cheng; Jente B. Kuang; Andrew R. Brown; Campbell Millar; Asen Asenov (IEEE Des. Test, 2013)

Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study. - Negin Moezi; Daryoosh Dideban; Binjie Cheng; Scott Roy; Asen Asenov (Microelectron. J., 2013)

Analytical Models for Three-Dimensional Ion Implantation Profiles in FinFETs. - Liping Wang; Andrew R. Brown; Binjie Cheng; Asen Asenov (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2013)

FDSOI molecular flash cell with reduced variability for low power flash applications. - Vihar P. Georgiev; Salvatore M. Amoroso; Laia Vila-Nadal; Cristoph Busche; Leroy Cronin; Asen Asenov (ESSDERC, 2014)

Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stability. - Xingsheng Wang; Binjie Cheng; Andrew R. Brown; Campbell Millar; Asen Asenov (ESSDERC, 2014)

Factoring variability in the Design/Technology Co Optimisation (DTCO) in advanced CMOS. - Asen Asenov (ETS, 2014)

Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells. - Vihar P. Georgiev; Asen Asenov (NMA, 2014)

Special section reliability and variability of devices for circuits and systems. - Asen Asenov; Ulf Schlichtmann; Cher Ming Tan; Hei Wong; Xing Zhou (Microelectron. Reliab., 2014)

RTN distribution comparison for bulk, FDSOI and FinFETs devices. - Louis Gerrer; Salvatore M. Amoroso; Razaidi Hussin; Asen Asenov (Microelectron. Reliab., 2014)

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. - Louis Gerrer; Jie Ding; Salvatore M. Amoroso; Fikru Adamu-Lema; Razaidi Hussin; Dave Reid; Campbell Millar; A. Asenov (Microelectron. Reliab., 2014)

Experimental evidences and simulations of trap generation along a percolation path. - Louis Gerrer; Razaidi Hussin; Salvatore M. Amoroso; Jacopo Franco; Pieter Weckx; Marko Simicic; N. Horiguchi; Ben Kaczer; Tibor Grasser; Asen Asenov (ESSDERC, 2015)

Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. - Razaidi Hussin; Louis Gerrer; Jie Ding; Liping Wang; Salvatore M. Amoroso; Binjie Cheng; Dave Reid; Pieter Weckx; Marko Simicic; Jacopo Franco; Annelies Vanderheyden; Danielle Vanhaeren; et al. (ESSDERC, 2015)

Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits. - A. Asenov; Jie Ding; Dave Reid; Plamen Asenov; Salvatore M. Amoroso; Fikru Adamu-Lema; Louis Gerrer (ISCAS, 2015)

Circuit design perspectives for Ge FinFET at 10nm and beyond. - Saurabh Sinha; Lucian Shifren; Vikas Chandra; Brian Cline; Greg Yeric; Robert C. Aitken; Bingjie Cheng; Andrew R. Brown; Craig Riddet; C. Alexandar; Campbell Millar; Asen Asenov (ISQED, 2015)

Mastering CMOS variability is the key to success. - Asen Asenov (IET Comput. Digit. Tech., 2015)

Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. - Louis Gerrer; Vihar P. Georgiev; Salvatore M. Amoroso; Ewan Towie; A. Asenov (Microelectron. Reliab., 2015)

Nanowire transistor solutions for 5nm and beyond. - A. Asenov; Yangang Wang; Binjie Cheng; Xingsheng Wang; Plamen Asenov; Talib Al-Ameri; Vihar P. Georgiev (ISQED, 2016)

Multi-scale electrothermal simulation and modelling of resistive random access memory devices. - Toufik Sadi; Liping Wang; Asen Asenov (PATMOS, 2016)

Editorial. - Asen Asenov; Ulf Schlichtmann; Cher Ming Tan; Hei Wong; Xing Zhou (Microelectron. Reliab., 2016)

Multivariate Modeling of Variability Supporting Non-Gaussian and Correlated Parameters. - André Lange; Christoph Sohrmann; Roland Jancke; Joachim Haase; Binjie Cheng; Asen Asenov; Ulf Schlichtmann (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2016)

TCAD based Design-Technology Co-Optimisations in advanced technology nodes. - Asen Asenov; Karim El Sayed; Ricardo Borges; Plamen Asenov; Campbell Millar; Terry Ma (VLSI-DAT, 2017)

Software Server for Automatic Generation of Audio Lectures (uListenSrv). - Milen Petrov; Asen Asenov; Adelina Aleksieva-Petrova (Int. J. Adv. Corp. Learn., 2017)

Progress on carbon nanotube BEOL interconnects. - Benjamin Uhlig; Jie Liang; Jaehyun Lee; Raphael Ramos; Abitha Dhavamani; Nicole Nagy; Jean Dijon; Hanako Okuno; Dipankar Kalita; Vihar P. Georgiev; Asen Asenov; Salvatore M. Amoroso; et al. (DATE, 2018)

Automatic Segmentation of Lumbar Spine MRI Using Ensemble of 2D Algorithms. - Nedelcho Georgiev; Asen Asenov (CSI@MICCAI, 2018)

Impact of the Trap Attributes on the Gate Leakage Mechanisms in a 2D MS-EMC Nanodevice Simulator. - Cristina Medina-Bailon; Toufik Sadi; Carlos Sampedro 002; José Luis Padilla; Luca Donetti; Vihar P. Georgiev; Francisco Gámiz; Asen Asenov (NMA, 2018)

Microscopic KMC Modeling of Oxide RRAMs. - Toufik Sadi; Asen Asenov (NMA, 2018)

Stochastic analysis of surface roughness models in quantum wires. - Mihail Nedjalkov; Paul Ellinghaus; Josef Weinbub; Toufik Sadi; Asen Asenov; Ivan Dimov 001; Siegfried Selberherr (Comput. Phys. Commun., 2018)

Advanced Simulation of RRAM Memory Cells. - Toufik Sadi; Oves Badami; Vihar P. Georgiev; Jie Ding; Asen Asenov (ASICON, 2019)

Techniques for Statistical Enhancement in a 2D Multi-subband Ensemble Monte Carlo Nanodevice Simulator. - Cristina Medina-Bailon; Carlos Sampedro 002; José Luis Padilla; Luca Donetti; Vihar P. Georgiev; Francisco Gámiz; Asen Asenov (LSSC, 2019)

Kinetic Monte Carlo Analysis of the Operation and Reliability of Oxide Based RRAMs. - Toufik Sadi; Oves Badami; Vihar P. Georgiev; Asen Asenov (LSSC, 2019)

The First International Competition in Machine Reconnaissance Blind Chess. - Ryan W. Gardner; Corey Lowman; Casey Richardson; Ashley J. Llorens; Jared Markowitz; Nathan Drenkow; Andrew Newman; Gregory Clark; Gino Perrotta; Robert Perrotta; Timothy Highley; Vlad Shcherbina; et al. (NeurIPS (Competition and Demos), 2019)

TCAD Simulation of Novel Semiconductor Devices. - Tapas Dutta; Cristina Medina-Bailon; Ali Rezaei; Daniel Nagy; Fikru Adamu-Lema; Nikolas Xeni; Yassine Abourrig; Naveen Kumar 014; Vihar P. Georgiev; Asen Asenov (ASICON, 2021)

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part I: CNFET Transistor Optimization. - Rongmei Chen; Lin Chen; Jie Liang; Yuanqing Cheng; Souhir Elloumi; Jaehyun Lee; Kangwei Xu; Vihar P. Georgiev; Kai Ni 004; Peter Debacker; Asen Asenov; Aida Todri-Sanial (IEEE Trans. Very Large Scale Integr. Syst., 2022)

Carbon Nanotube SRAM in 5-nm Technology Node Design, Optimization, and Performance Evaluation - Part II: CNT Interconnect Optimization. - Rongmei Chen; Lin Chen; Jie Liang; Yuanqing Cheng; Souhir Elloumi; Jaehyun Lee; Kangwei Xu; Vihar P. Georgiev; Kai Ni 004; Peter Debacker; Asen Asenov; Aida Todri-Sanial (IEEE Trans. Very Large Scale Integr. Syst., 2022)

Fully Convolutional Generative Machine Learning Method for Accelerating Non-Equilibrium Greens Function Simulations. - Preslav Aleksandrov; Ali Rezaei; Nikolas Xeni; Tapas Dutta; Asen Asenov; Vihar P. Georgiev (CoRR, 2023)

A Methodology for Process Design Kit Re-Centering Using TCAD and Experimental Data for Cryogenic Temperatures. - Tapas Dutta; Fikru Adamu-Lema; Djamel Bensouiah; Asen Asenov (CoRR, 2025)