Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterization. - M. Azzaz; A. Benoist; Elisa Vianello; Daniele Garbin; Eric Jalaguier; Carlo Cagli; C. Charpin; Stefania Bernasconi; Simon Jeannot; T. Dewolf; G. Audoit; C. Guedj; et al. (ESSDERC, 2015)

Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology. - A. Benoist; S. Denorme; X. Federspiel; Bruno Allard; Philippe Candelier (IRPS, 2015)