Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. - R. Berthelon; François Andrieu; P. Perreau; E. Baylac; A. Pofelski; Emmanuel Josse; Didier Dutartre; A. Claverie; Michel Haond (ESSDERC, 2016)

Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology. - Luca Laurin; Matteo Baldo; Elisa Petroni; Giulia Samanni; Lorenzo Turconi; A. Motta; Massimo Borghi; A. Serafini; D. Codegoni; M. Scuderi; S. Ran; A. Claverie; et al. (IRPS, 2023)