Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies. - A. Bossuet; A. Divay; Baudouin Martineau; Cedric Dehos; B. Blampey; Y. Morandini (ESSDERC, 2022)

CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design. - B. Martineau; A. Bossuet; A. Divay; B. Blampey; Y. Morandini (ICECS 2022, 2022)

Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications. - Joycelyn Hai; Florian Cacho; A. Divay; Estelle Lauga-Larroze; Jean-Daniel Arnould; Jeremie Forest; Vincent Knopik; Xavier Garros (IRPS, 2022)

Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation. - Joycelyn Hai; Florian Cacho; X. Federspiel; Tidjani Garba-Seybou; A. Divay; Estelle Lauga-Larroze; Jean-Daniel Arnould (IRPS, 2023)

A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. - A. Divay; Cédric Dehos; Ismael Charlet; Fred Gaillard; B. Duriez; Xavier Garros; J. Antonijevic; Joycelyn Hai; Nathalie Revil; Jeremie Forest; Vincent Knopik; Florian Cacho; et al. (IRPS, 2024)

Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique. - A. Divay; Olivier Valorge; Christophe Dubarry; M. Medbouhi; Rémi Franiatte; Daniel Mermin; R. Velard; Y. Gobil; F. Morisot; Erwan Morvan; Ismael Charlet; Luca Lucci; et al. (VLSI Technology and Circuits, 2024)