Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing. - A. E. Islam; Kevin D. Leedy; Neil A. Moser; S. Ganguli; Kyle J. Liddy; Andrew J. Green; Kelson D. Chabak (DRC, 2021)

The $R_{ text{ON}}-V_{ text{BK}}$ Relationship in $ beta$-Ga2O3 Lateral MESFETs Determined Using Physics-Based TCAD Simulation. - S. Ahmed; A. E. Islam; Daniel Dryden; Kyle J. Liddy; Nolan S. Hendricks; Neil A. Moser; Kelson D. Chabak; Andrew J. Green (DRC, 2023)

High breakdown electric field in $ text{Ba}_{ mathrm{x}} text{Sr}_{1- mathrm{x}} text{TiO}_{3}/ text{SiO}_{2}$ dielectric stack formed on (010) $ beta$-Ga2O3 substrates. - Adam Miesle; A. E. Islam; E. Shin; G. Subramanyam; Kevin D. Leedy; S. Ganguli; Daniel Dryden; Kyle J. Liddy; Kelson D. Chabak; Andrew J. Green (DRC, 2023)