Threshold energies in the light emission characteristics of silicon MOS tunnel diodes. - N. Asli; M. I. Vexler; A. F. Shulekin; P. Douglas Yoder; I. V. Grekhov; Peter Seegebrecht (Microelectron. Reliab., 2001)

Soft breakdown of MOS tunnel diodes with a spatially non-uniform oxide thickness. - R. Khlil; A. El Hdiy; A. F. Shulekin; S. E. Tyaginov; M. I. Vexler (Microelectron. Reliab., 2004)

Tunnel charge transport within silicon in reversely-biased MOS tunnel structures. - M. I. Vexler; A. El Hdiy; D. Grgec; S. E. Tyaginov; R. Khlil; Bernd Meinerzhagen; A. F. Shulekin; I. V. Grekhov (Microelectron. J., 2006)

The post-damage behavior of a MOS tunnel emitter transistor. - S. E. Tyaginov; M. I. Vexler; A. F. Shulekin; I. V. Grekhov (Microelectron. Reliab., 2006)