Enhancement-mode Al045Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistor with p-Al0.3Ga0.7N Gate. - E. A. Douglas; B. A. Klein; A. A. Allerman; Albert G. Baca; T. R. Fortune; A. M. Armstrong (DRC, 2018)

Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition. - Albert G. Baca; B. A. Klein; A. M. Armstrong; A. A. Allerman; E. A. Douglas; T. R. Fortune; R. J. Kaplar (IRPS, 2019)