16kbit 1T1R OxRAM arrays embedded in 28nm FDSOI technology demonstrating low BER, high endurance, and compatibility with core logic transistors. - Laurent Grenouillet; Niccolo Castellani; Alain Persico; Valentina Meli; Simon Martin 006; Olivier Billoint; R. Segaud; Stefania Bernasconi; C. Pellissier; Carine Jahan; Christelle Charpin-Nicolle; P. Dezest; et al. (IMW, 2021)

Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. - Tadeu Mota Frutuoso; Xavier Garros; Perrine Batude; Laurent Brunet; Joris Lacord; Benoit Sklénard; V. Lapras; Claire Fenouillet-Béranger; M. Ribotta; A. Magalhaes-Lucas; J. Kanyandekwe; R. Kies; et al. (VLSI Technology and Circuits, 2022)

Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. - T. Dubreuil; Sylvain Barraud; J.-M. Pedini; Jean-Michel Hartmann; F. Boulard; A. Sarrazin; A. Gharbi; Johannes Sturm; A. Lambert; S. Martin; Niccolo Castellani; A. Anotta; et al. (ESSDERC, 2023)

Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. - Daphnée Bosch; Abygaël Viey; Tadeu Mota Frutuoso; P. Lheritier; C. Licitra; Nada Zerhouni; A. Albouy; Laurent Brunet; A. Magalhaes-Lucas; L. M. B. da Silva; H. Boutry; M. Husien Fahmy Taha Abdelrahman; et al. (VLSI Technology and Circuits, 2024)