A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications. - Wei-Chih Chien; E. K. Lai; L. Buzi; C. W. Cheng; C. W. Yeh; A. Ray; Lynne M. Gignac; N. Gong; Huai-Yu Cheng; Alexander Grun; D. Y. Lee; W. Kim; et al. (IMW, 2023)

Numerical scheme for partial differential equations involving small diffusion term with non-local boundary conditions. - Shree Bala; Lolugu Govindarao; Abhishek Das; A. Majumdar (J. Appl. Math. Comput., 2023)

State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications. - H. Y. Cheng; Z. L. Liu; A. Majumdar; Alexander Grun; A. Ray; J. Su; Malte J. Rasch; Fabio Carta; Lynne M. Gignac; C. Lavoie; C. W. Cheng; M. Bright Sky; et al. (VLSI Technology and Circuits, 2024)