High field stress at and above room temperature in 2.3 nm thick oxides. - Damien Zander; Christian Petit; F. Saigné; A. Meinertzhagen (Microelectron. Reliab., 2001)

Creation and thermal annealing of interface states induced by uniform or localized injection in 2.3nm thick oxides. - D. Zander; F. Saigné; A. Meinertzhagen (Microelectron. Reliab., 2001)

Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. - M. Fadlallah; C. Petit; A. Meinertzhagen; Gérard Ghibaudo; M. Bidaud; O. Simonetti; F. Guyader (Microelectron. Reliab., 2003)

Contribution of oxide traps on defect creation and LVSILC conduction in ultra thin gate oxide devices. - Damien Zander; F. Saigné; A. Meinertzhagen; Christian Petit (Microelectron. Reliab., 2003)

Low voltage SILC and P- and N-MOSFET gate oxide reliability. - Christian Petit; A. Meinertzhagen; Damien Zander; O. Simonetti; M. Fadlallah; T. Maurel (Microelectron. Reliab., 2005)