First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory application. - K. Banerjee; Laurent Breuil; A. P. Milenin; M. Pak; J. Stiers; Sean R. C. McMitchell; L. Di Piazza; Geert Van den Bosch; Jan Van Houdt (IMW, 2021)