Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. - François Andrieu; Mikaël Cassé; E. Baylac; P. Perreau; O. Nier; Denis Rideau; R. Berthelon; Franck Pourchon; A. Pofelski; Barbara De Salvo; C. Gallon; Vincent Mazzocchi; et al. (ESSDERC, 2014)

Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integration. - R. Berthelon; François Andrieu; P. Perreau; E. Baylac; A. Pofelski; Emmanuel Josse; Didier Dutartre; A. Claverie; Michel Haond (ESSDERC, 2016)