Hot-carrier-Induced Circuit Degradation for 0.18 µm CMOS Technology. - Wei Li; Qiang Li 039; J. S. Yuan; Joshua McConkey; Yuan Chen; Sundar Chetlur; Jonathan Zhou; A. S. Oates (ISQED, 2001)

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors. - Merlyne M. De Souza; J. Wang; S. K. Manhas; E. M. Sankara Narayanan; A. S. Oates (Microelectron. Reliab., 2001)

Characterisation of series resistance degradation through charge pumping technique. - S. K. Manhas; D. Chandra Sekhar; A. S. Oates; Merlyne M. De Souza (Microelectron. Reliab., 2003)

Influence of mobility model on extraction of stress dependent source-drain series resistance. - Merlyne M. De Souza; S. K. Manhas; D. Chandra Sekhar; A. S. Oates; Prasad Chaparala (Microelectron. Reliab., 2004)

Electromigration failure distributions of dual damascene Cu /low - k interconnects. - A. S. Oates; Shou-Chung Lee (Microelectron. Reliab., 2006)

On the voltage dependence of copper/low-k dielectric breakdown. - Shou-Chung Lee; A. S. Oates (IRPS, 2015)

Mechanisms of electromigration under AC and pulsed-DC stress in Cu/low-k dual damascene interconnects. - M. H. Lin; A. S. Oates (IRPS, 2015)

BEOL TDDB reliability modeling and lifetime prediction using critical energy to breakdown. - Pin-Shiang Chen; Shou-Chung Lee; A. S. Oates; Chee Wee Liu (IRPS, 2018)

Percolation defect nucleation and growth as a description of the statistics of electrical breakdown for gate, MOL and BEOL dielectrics. - Yi Ching Ong; Shou-Chung Lee; A. S. Oates (IRPS, 2018)

Characterization of Critical Peak Current and General Model of Interconnect Systems Under Short Pulse-Width Conditions. - Ming-Hsien Lin; W. S. Chou; Y. T. Yang; A. S. Oates (IRPS, 2019)