Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs. - A. Sasikumar; Z. Zhang; P. Kumar; En-xia Zhang; Daniel M. Fleetwood; Ronald D. Schrimpf; Paul Saunier; Cathy Lee; S. A. Ringel; Aaron R. Arehart (IRPS, 2015)

Identification of an RF degradation mechanism in GaN based HEMTs triggered by midgap traps. - A. Sasikumar; Aaron R. Arehart; Glen David Via; B. Winningham; Brian S. Poling; E. R. Heller; S. A. Ringel (Microelectron. Reliab., 2015)

Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN. - Aaron R. Arehart; A. Sasikumar; Glen David Via; Brian S. Poling; E. R. Heller; S. A. Ringel (Microelectron. Reliab., 2016)

Deep trap-induced dynamic on-resistance degradation in GaN-on-Si power MISHEMTs. - A. Sasikumar; Aaron R. Arehart; D. W. Cardwell; C. M. Jackson; W. Sun; Z. Zhang; S. A. Ringel (Microelectron. Reliab., 2016)