Tunnel oxide degradation under pulsed stress. - G. Ghidini; C. Capolupo; G. Giusto; A. Sebastiani; B. Stragliati; Maria Elena Vitali (Microelectron. Reliab., 2005)

High-K dielectrics for inter-poly application in non volatile memories. - A. Sebastiani; R. Piagge; Alberto Modelli; G. Ghidini (Microelectron. Reliab., 2007)

Trapped charge and stress induced leakage current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale. - Mario Lanza; Marc Porti; Montserrat Nafría; Xavier Aymerich; G. Ghidini; A. Sebastiani (Microelectron. Reliab., 2009)