Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. - Liviu Militaru; A. Souifi; M. Mouis; Alain Chantre; G. Brémond (Microelectron. Reliab., 2001)

Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. - Nabil Sghaier; M'Hamed Trabelsi; Ne. Sghaier; Liviu Militaru; Abdelkader Souifi; Adel Kalboussi; Noureddine Yacoubi (Microelectron. J., 2006)

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. - Nabil Sghaier; M'Hamed Trabelsi; Noureddine Yacoubi; Jean-Marie Bluet; Abdelkader Souifi; Gérard Guillot; Christophe Gaquière; J. C. DeJaeger (Microelectron. J., 2006)

A new SIMPLORER model for single-electron transistors. - Aimen Boubaker; Nabil Sghaier; M. Troudi; A. Kalboussi; Nicolas Baboux; A. Souifi (Microelectron. J., 2007)

Blue/green luminescence based on Zn(S)Se/GaAs heterostructures. - Neila Hizem; A. Kalboussi; R. Adhiri; A. Souifi (Microelectron. J., 2007)

Macro-modeling for the compact simulation of single electron transistor using SIMPLORER. - M. Troudi; Nabil Sghaier; Aimen Boubaker; A. Souifi; A. Kalboussi (Microelectron. J., 2007)

Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators. - Wei Xuan; Françis Calmon; Nicolas Baboux; Abdelkader Souifi (ICECS, 2009)

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. - Aimen Boubaker; M. Troudi; Nabil Sghaier; A. Souifi; Nicolas Baboux; A. Kalboussi (Microelectron. J., 2009)

Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels. - S. Chatbouri; M. Troudi; Nabil Sghaier; A. Kalboussi; Dominique Drouin; V. Aimez; A. Souifi (SSD, 2013)

3D microelectronic with BEOL compatible devices. - Dominique Drouin; Mohamed Amine-Bounouar; Gabriel Droulers; M. Labalette; Michel Pioro-Ladriere; A. Souifi; Serge Ecoffey (VTS, 2015)

Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. - N. Abdelwahed; M. Troudi; Nabil Sghaier; Abdelkader Souifi (Microelectron. Reliab., 2015)

Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. - Getenet Tesega Ayele; Stéphane Monfray; Frédéric Boeuf; Jean-Pierre Cloarec; Serge Ecoffey; Dominique Drouin; Etienne Puyoo; Abdelkader Souifi (ESSDERC, 2017)

Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals. - S. Chatbouri; M. Troudi; A. Kalboussi; A. Souifi (Microelectron. Reliab., 2017)

Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics. - Slah Hlali; Neila Hizem; Liviu Militaru; A. Kalboussi; Abdelkader Souifi (Microelectron. Reliab., 2017)

Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance. - Camille Laguna; Mathieu Bernard; Nicolas Bernier; D. Rouchon; N. Rochat; Julien Garrione; A. Jannaud; Emmanuel Nolot; Valentina Meli; Niccolo Castellani; C. Sabbione; Guillaume Bourgeois; et al. (IMW, 2021)

Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. - Camille Laguna; Mathieu Bernard; Julien Garrione; Niccolo Castellani; Valentina Meli; S. Martin; François Aussenac; D. Rouchon; N. Rochat; Emmanuel Nolot; Guillaume Bourgeois; Marie Claire Cyrille; et al. (ESSDERC, 2022)