Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. - Karine Florent; A. Subirats; Simone Lavizzari; Robin Degraeve; Umberto Celano; Ben Kaczer; Luca Di Piazza; Mihaela Ioana Popovici; Guido Groeseneken; Jan Van Houdt (IRPS, 2018)

Comphy - A compact-physics framework for unified modeling of BTI. - Gerhard Rzepa; Jacopo Franco; Barry J. O'Sullivan; A. Subirats; Marko Simicic; Geert Hellings; Pieter Weckx; Markus Jech; Theresia Knobloch; Michael Waltl; Philippe Roussel; Dimitri Linten; et al. (Microelectron. Reliab., 2018)

New Insights into the Imprint Effect in FE-HfO2 and its Recovery. - Yusuke Higashi; Karine Florent; A. Subirats; Ben Kaczer; Luca Di Piazza; Sergiu Clima; Nicolo Ronchi; Sean R. C. McMitchell; Kaustuv Banerjee; Umberto Celano; Masamichi Suzuki; Dimitri Linten; et al. (IRPS, 2019)

Modeling BTI Reliability in CMOS DRAM Periphery Device: A Review of BTI Analysis Tool (BAT). - A. Subirats; M. Samiee; G. Ferrari; U. Sharma; T. Imamoto; M. Yokomichi; S. Srivastava; K. Florent; T. Owens; A. S. Bisht; S. Mahapatra (IRPS, 2025)