Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices. - Aakanksha Mishra; Ankur Gupta (IEEE Access, 2022)

Extremely Large Breakdown to Snapback Voltage Offset $( mathrm{V}_{ mathrm{t}1} > > mathrm{V}_{ text{BD}})$: Another Way to Improve ESD Resilience of LDMOS Devices. - Aakanksha Mishra; Boeila Sampath Kumar; M. Monishmurali; Shaik Ahamed Suzaad; Shubham Kumar; Kiran Pote Sanjay; Amit Kumar Singh; Ankur Gupta; Mayank Shrivastava (IRPS, 2023)

Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET. - Nitish Kumar; Aakanksha Mishra; Ankur Gupta; Pushpapraj Singh (Microelectron. J., 2024)