Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study. - Aakash Kumar Jain; Mamidala Jagadesh Kumar (IEEE Access, 2020)

Physical Insights into the Leakage Mechanisms Governing the Scaling Trends in 4H-SiC Based Junctionless FETs. - Jaspreet Singh; Aakash Kumar Jain; Mamidala Jagadesh Kumar (VLSID, 2025)