Temperature behavior and modeling of ohmic contacts to Si+ implanted n-type GaN. - Amador Pérez-Tomás; Marcel Placidi; Abel Fontserè; P. M. Gammon; Michael R. Jennings (Microelectron. Reliab., 2011)

High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; J. M. Parsey; Peter Moens (ESSDERC, 2012)

Wafer scale and reliability investigation of thin HfO2·AlGaN/GaN MIS-HEMTs. - Abel Fontserè; Amador Pérez-Tomás; Philippe Godignon; José Millán; Herbert De Vleeschouwer; John M. Parsey; Peter Moens (Microelectron. Reliab., 2012)

Reverse current thermal activation of AlGaN/GaN HEMTs on Si(1 1 1). - Abel Fontserè; A. Pérez-Tomás; Marcel Placidi; N. Baron; S. Chenot; Yvon Cordier; J. C. Moreno (Microelectron. Reliab., 2012)