Technology and design of GaN power devices. - Peter Moens; Abhishek Banerjee 003; P. Coppens; Aurore Constant; Piet Vanmeerbeek; Z. Li; F. Declercq; L. De Schepper; H. De Vleeschouwer; C. Liu; B. Padmanabhan; W. Jeon; et al. (ESSDERC, 2015)

Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors. - Matteo Meneghini; Riccardo Silvestri; Stefano Dalcanale; Davide Bisi; Enrico Zanoni; Gaudenzio Meneghesso; Piet Vanmeerbeek; Abhishek Banerjee 003; Peter Moens (IRPS, 2015)

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. - Alaleh Tajalli; Matteo Meneghini; Isabella Rossetto; Peter Moens; Abhishek Banerjee 003; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate. - Eleonora Canato; Fabrizio Masin; Matteo Borga; Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Arno Stockman; Abhishek Banerjee 003; Peter Moens (IRPS, 2019)

Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions. - Fabrizio Masin; Matteo Meneghini; Eleonora Canato; Alessandro Barbato; Carlo De Santi; Arno Stockman; Abhishek Banerjee 003; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (IRPS, 2020)