Bootstrap circuit with high-voltage charge storing for area efficient gate drivers in power management systems. - Achim Seidel; Marco Salvatore Costa; Joachim Joos; Bernhard Wicht (ESSCIRC, 2014)

Area Efficient Integrated Gate Drivers Based on High-Voltage Charge Storing. - Achim Seidel; Marco Salvatore Costa; Joachim Joos; Bernhard Wicht (IEEE J. Solid State Circuits, 2015)

25.3 A 1.3A gate driver for GaN with fully integrated gate charge buffer capacitor delivering 11nC enabled by high-voltage energy storing. - Achim Seidel; Bernhard Wicht (ISSCC, 2017)

A 50V, 1.45ns, 4.1pJ High-Speed Low-Power Level Shifter for High-Voltage DCDC Converters. - Daniel Lutz; Achim Seidel; Bernhard Wicht (ESSCIRC, 2018)

A fully integrated three-level 11.6nC gate driver supporting GaN gate injection transistors. - Achim Seidel; Bernhard Wicht (ISSCC, 2018)

Integrated Gate Drivers Based on High-Voltage Energy Storing for GaN Transistors. - Achim Seidel; Bernhard Wicht (IEEE J. Solid State Circuits, 2018)

Long, Short, Monolithic - The Gate Loop Challenge for GaN Drivers: Invited Paper. - Maik Kaufmann; Achim Seidel; Bernhard Wicht (CICC, 2020)