Electronic properties of GeySi1-y: H films deposited by LF PECVD at low temperatures. - Ismael Cosme; Andrey Kosarev; Francisco Temoltzi; Adrian Itzmoyotl (CCE, 2011)

Study of doping of Ge0.96Si0.04: H films with B, and P during low frequency plasma deposition at low temperature. - Ismael Cosme; Andrey Kosarev; Francisco Temoltzi; Adrian Itzmoyotl (CCE, 2011)

Study of optoelectronics properties of indium tin oxide films fabricated by sputtering in oxygen atmosphere. - Saraí Vázquez; Antonio Olivares; Ismael Cosme; Svetlana Mansurova; Andrey Kosarev; Adrian Itzmoyotl (CCE, 2016)

Effect of germane in gas phase on electronic properties of GeXSiY: H alloys deposited by RF plasma discharge. - S. Zarate; Ismael Cosme; Andrey Kosarev; Svetlana Mansurova; Adrian Itzmoyotl; Hiram E. Martinez (CCE, 2016)

Photoluminescence emission under thermal annealing of Silica and Titania nanospheres arrays. - Carina Gutierrez; Mario Moreno; Ponciano Rodríguez-Montero; Leticia Tecuapetla; Armando Hernández; Adrian Itzmoyotl (CCE, 2020)