A High Power Density Electrostatic Vibration-to-Electric Energy Converter Based On An In-Plane Overlap Plate (IPOP) Mechanism - Ayyaz Mahmood Paracha; Philippe Basset; Frédéric Marty; Adrian Vaisman Chasin; Patrick Poulichet; Tarik Bourouina (CoRR, 2008)

Robust model reduction of uncertain systems maintaining uncertainty structure. - Eduardo N. Gonçalves; Reinaldo M. Palhares; Ricardo H. C. Takahashi; Adrian Vaisman Chasin (Int. J. Control, 2009)

Bidirectional communication in an HF hybrid organic/solution-processed metal-oxide RFID tag. - Kris Myny; Maarten Rockele; Adrian Vaisman Chasin; Duy-Vu Pham; Jürgen Steiger; Silviu Botnaras; Dennis Weber; Bernhard Herold; Jürgen Ficker; Bas van der Putten; Gerwin H. Gelinck; Jan Genoe; et al. (ISSCC, 2012)

Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors. - Ajay Bhoolokam; Manoj Nag; Adrian Vaisman Chasin; Soeren Steudel; Jan Genoe; Gerwin H. Gelinck; Guido Groeseneken; Paul Heremans (ESSDERC, 2014)

Self-heating-aware CMOS reliability characterization using degradation maps. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Kai-Hsin Chuang; Jacopo Franco; Marko Simicic; Pieter Weckx; Dimitri Linten (IRPS, 2018)

Hot electron and hot hole induced degradation of SiGe p-FinFETs studied by degradation maps in the entire bias space. - Jacopo Franco; Ben Kaczer; Adrian Vaisman Chasin; Erik Bury; Dimitri Linten (IRPS, 2018)

New methodology for modelling MOL TDDB coping with variability. - Philippe J. Roussel; Adrian Vaisman Chasin; Steven Demuynck; Naoto Horiguchi; Dimitri Linten; Anda Mocuta (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire Transistors. - Eddy Simoen; Alberto Vinicius Oliveira; Anabela Veloso; Adrian Vaisman Chasin; Romain Ritzenthaler; Hans Mertens; Naoto Horiguchi; Cor Claeys (ASICON, 2019)

Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. - Alexander Makarov; Dimitri Linten; Stanislav Tyaginov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Markus Jech; Tibor Grasser (ESSDERC, 2019)

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. - Erik Bury; Adrian Vaisman Chasin; Michiel Vandemaele; Simon Van Beek; Jacopo Franco; Ben Kaczer; Dimitri Linten (IRPS, 2019)

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. - Alexander Makarov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Tibor Grasser; Dimitri Linten; Stanislav Tyaginov (IRPS, 2019)

Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Zlatan Stanojevic; Alexander Makarov; Adrian Vaisman Chasin; Erik Bury; Hans Mertens; Dimitri Linten; Guido Groeseneken (IRPS, 2019)

Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects. - Chen Wu; Adrian Vaisman Chasin; Andrea Padovani; Alicja Lesniewska; Steven Demuynck; Kris Croes (IRPS, 2019)

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. - Adrian Vaisman Chasin; Jacopo Franco; Erik Bury; Romain Ritzenthaler; Eugenio Dentoni Litta; Alessio Spessot; Naoto Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2020)

Conduction and Breakdown Mechanisms in Low-k Spacer and Nitride Spacer Dielectric Stacks in Middle of Line Interconnects. - Chen Wu; Adrian Vaisman Chasin; Steven Demuynck; Naoto Horiguchi; Kris Croes (IRPS, 2020)

Process-induced charging damage in IGZO nTFTs. - Gaspard Hiblot; Nouredine Rassoul; Lieve Teugels; Katia Devriendt; Adrian Vaisman Chasin; Michiel J. van Setten; Attilio Belmonte; Romain Delhougne; Gouri Sankar Kar (IRPS, 2021)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; K. Banerjee; H. Puliyalil; Shreya Kundu; M. Pak; et al. (ICICDT, 2022)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

MTJ degradation in SOT-MRAM by self-heating-induced diffusion. - Simon Van Beek; Kaiming Cai; Siddharth Rao; Ganesh Jayakumar; Sebastien Couet; Nico Jossart; Adrian Vaisman Chasin; Gouri Sankar Kar (IRPS, 2022)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. - Alexander Grill; V. John; Jakob Michl; A. Beckers; Erik Bury; Stanislav Tyaginov; Bertrand Parvais; Adrian Vaisman Chasin; Tibor Grasser; Michael Waltl; Ben Kaczer; Bogdan Govoreanu (IRPS, 2022)

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics. - Barry J. O'Sullivan; Brecht Truijen; Vamsi Putcha; Alexander Grill; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Md Nur K. Alam; Jan Van Houdt (IRPS, 2022)

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. - Taras Ravsher; Andrea Fantini; Adrian Vaisman Chasin; Shamin H. Sharifi; Hubert Hody; Harold Dekkers; Thomas Witters; Jan Van Houdt; Valeri Afanas'ev; Sebastien Couet; Gouri Sankar Kar (IRPS, 2022)

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacks. - Brecht Truijen; Barry J. O'Sullivan; Md. Nurul Alam; Dieter Claes; Mischa Thesberg; Philippe Roussel; Adrian Vaisman Chasin; Geert Van den Bosch; Ben Kaczer; Jan Van Houdt (IRPS, 2022)

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. - Stanislav Tyaginov; Alexander Makarov; Al-Moatasem Bellah El-Sayed; Adrian Vaisman Chasin; Erik Bury; Markus Jech; Michiel Vandemaele; Alexander Grill; An De Keersgieter; Mikhail I. Vexler; Geert Eneman; Ben Kaczer (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm. - S. Subhechha; Nouredine Rassoul; Attilio Belmonte; Hubert Hody; Harold Dekkers; Michiel J. van Setten; Adrian Vaisman Chasin; Shamin H. Sharifi; S. Sutar; L. Magnarin; Umberto Celano; H. Puliyalil; et al. (VLSI Technology and Circuits, 2022)

MTJ degradation in multi-pillar SOT-MRAM with selective writing. - Simon Van Beek; Kaiming Cai; Kaiquan Fan; Giacomo Talmelli; Anna Trovato; Nico Jossart; Siddharth Rao; Adrian Vaisman Chasin; Sebastien Couet (IRPS, 2023)

Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT. - Attilio Belmonte; Shreya Kundu; S. Subhechha; Adrian Vaisman Chasin; Nouredine Rassoul; Harold Dekkers; H. Puliyalil; F. Seidel; P. Carolan; Romain Delhougne; Gouri Sankar Kar (VLSI Technology and Circuits, 2023)

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. - J. P. Bastos; Barry J. O'Sullivan; Yusuke Higashi; Adrian Vaisman Chasin; Jacopo Franco; Hiroaki Arimura; J. Ganguly; Elena Capogreco; Alessio Spessot; N. Horiguchi (IRPS, 2024)

Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. - Yusuke Higashi; J. P. Bastos; Adrian Vaisman Chasin; Laurent Breuil; Antonio Arreghini; S. Ramesh; S. Rachidi; Y. Jeong; Geert Van den Bosch; Maarten Rosmeulen (IRPS, 2024)

DC Reliability Study of $ text{high}- kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. - Barry J. O'Sullivan; AliReza Alian; Arturo Sibaja Hernandez; Jacopo Franco; Sachin Yadav 001; Hao Yu; Aarti Rathi; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2024)

Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTI. - Pietro Rinaudo; Adrian Vaisman Chasin; Ying Zhao; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Michiel J. van Setten; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Fundamental understanding of NBTI degradation mechanism in IGZO channel devices. - Ying Zhao; Pietro Rinaudo; Adrian Vaisman Chasin; Brecht Truijen; Ben Kaczer; Nouredine Rassoul; Harold Dekkers; Attilio Belmonte; Ingrid De Wolf; Gouri Sankar Kar; Jacopo Franco (IRPS, 2024)

Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT. - Simon Van Beek; Adrian Vaisman Chasin; Subhali Subhechha; Harold Dekkers; Nouredine Rassoul; Yiqun Wan; Hongwei Tang; Joao P. Bastos; Attilio Belmonte; Gouri Sankar Kar (IRPS, 2025)

Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. - Aarti Rathi; Barry J. O'Sullivan; R. ElKashlan; B. Kazemi Esfeh; Arturo Sibaja Hernandez; Hao Yu; AliReza Alian; Sachin Yadav 001; Uthayasankaran Peralagu; Adrian Vaisman Chasin; Bertrand Parvais; Nadine Collaert (IRPS, 2025)

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation. - K. Vishwakarma; K. Lee; Anastasiia Kruv; Adrian Vaisman Chasin; Michiel J. van Setten; C. Pashartis; Oguzhan O. Okudur; M. Gonzalez; Nouredine Rassoul; A. Belmonte; Bem Kaczer (IRPS, 2025)