Low Hysteresis MoS2-FET Enabled by CVD-Grown h-BN Encapsulation. - Agata Piacentini; Daniel Schneider; Martin Otto 003; Bárbara Canto; Zhenyu Wang; Aleksandra Radenovic; Andras Kis; Max Christian Lemme; Daniel Neumaier (DRC, 2021)

Flexible CMOS electronics based on 2D p-type WSe2 and n-type MoS2. - Agata Piacentini; Dmitry K. Polyushkin; Burkay Uzlu; Annika Grundmann; Michael Heuken; Holger Kalisch; Andrei Vescan; Thomas Mueller; Max Christian Lemme; Daniel Neumaier (DRC, 2023)