Negative bias instability in 4H-SiC MOSFETS: Evidence for structural changes in the SiC. - Mark A. Anders 002; Patrick M. Lenahan; Aivars J. Lelis (IRPS, 2015)

Measurement considerations for evaluating BTI effects in SiC MOSFETs. - Daniel B. Habersat; Aivars J. Lelis; Ronald Green (Microelectron. Reliab., 2018)

Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance. - Patrick M. Lenahan; Mark A. Anders 002; R. J. Waskiewicz; Aivars J. Lelis (Microelectron. Reliab., 2018)

Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis; Mark A. Anders 002 (IRPS, 2019)

Permanent and Transient Effects of High-Temperature Bias Stress on Room- Temperature $V_{T}$ Drift Measurements in SiC Power MOSFETs. - Daniel B. Habersat; Ronald Green; Aivars J. Lelis (IRPS, 2019)

Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. - James P. Ashton; Patrick M. Lenahan; Daniel J. Lichtenwalner; Aivars J. Lelis (IRPS, 2020)

Towards a Robust Approach to Threshold Voltage Characterization and High Temperature Gate Bias Qualification. - Daniel B. Habersat; Aivars J. Lelis; Ronald Green (IRPS, 2020)

Dynamic On-State Resistance in SiC MOSFETs. - Ronald Green; Aivars J. Lelis; Damian Urciuoli; Erik Schroen; Daniel B. Habersat (IRPS, 2023)