Impact of Channel Doping and Gate Length on Small Signal Behaviour of Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET at THz Frequency. - Neha Gupta 003; Ajay Kumar 004; Rishu Chaujar (ISED, 2014)

TCAD RF performance investigation of Transparent Gate Recessed Channel MOSFET. - Ajay Kumar 004; Neha Gupta 003; Rishu Chaujar (Microelectron. J., 2016)

Temperature Reliability of Junctionless Twin Gate Recessed Channel (JL-TGRC) MOSFET with Different Gate Material for Low Power Digital-Logic Applications. - Ajay Kumar 004; Samarth Singh; Balark Tiwari; Rishu Chaujar (TENCON, 2018)

Non-Quasi-Static Small-Signal Modeling of TGRC MOSFET in Parameter Perspective for RF/Microwave Applications. - Ajay Kumar 004; Neha Gupta 003; Madan Mohan Tripathi; Rishu Chaujar (MOCAST, 2019)

Carbon Nanotube Recessed Channel (CNT-RC) MOSFET for High Linearity/ULSI Applications. - Ajay Kumar 004; Neha Gupta 003; Samarth Singh; Balark Tiwari; Madan Mohan Tripathi; Rishu Chaujar (TENCON, 2019)

Numerical simulation and parametric assessment of GaN buffered trench gate MOSFET for low power applications. - Pranav M. Tripathi; Harshit Soni; Rishu Chaujar; Ajay Kumar 004 (IET Circuits Devices Syst., 2020)

Small-Signal Modeling of GaN-BTG MOSFET for Wireless Applications. - Madan Mohan Tripathi; Ajay Kumar 004 (Wirel. Pers. Commun., 2023)

Performance Assessment of High-k SOI GaN FinFET with Different Fin Aspect Ratio for RF/Wireless Applications. - Vandana Singh Rajawat; Bharat Choudhary; Ajay Kumar 004 (Wirel. Pers. Commun., 2024)

NQS Small-Signal Circuit Modelling of GaN-SOI-FinFET for RF/Wireless Applications. - Vandana Singh Rajawat; Bharat Choudhary; Ajay Kumar 004 (Circuits Syst. Signal Process., 2025)