C-band GaAs FET power amplifiers with 70-W output power and 50% PAE for satellite communication use. - Akio Wakejima; Takahiro Asano; Takafumi Hirano; Masahiro Funabashi; Kohji Matsunaga (IEEE J. Solid State Circuits, 2005)

High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations. - Akio Wakejima; Kohji Matsunaga; Yuji Ando; Tatsuo Nakayama; Yasuhiro Okamoto; Kazuki Ota; Naotaka Kuroda; Masahiro Tanomura; Hironobu Miyamoto (IEICE Trans. Electron., 2007)

A Temperature Stable Amplifier Characteristics of AlGaN/GaN HEMTs on 3C-SiC/Si. - Arijit Bose; Debaleen Biswas; Shigeomi Hishiki; Sumito Ouchi; Koichi Kitahara; Keisuke Kawamura; Akio Wakejima (IEEE Access, 2021)

Influence of a thick nitride layer on transmission loss in GaN-on-3C-SiC/low resistivity Si. - Arijit Bose; Debaleen Biswas; Shigeomi Hishiki; Sumito Ouchi; Koichi Kitahara; Keisuke Kawamura; Akio Wakejima (IEICE Electron. Express, 2022)

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications. - Akio Wakejima; Arijit Bose; Debaleen Biswas; Shigeomi Hishiki; Sumito Ouchi; Koichi Kitahara; Keisuke Kawamura (IEICE Trans. Electron., 2022)