Recent Advances in Ga2O3 MOSFET Technologies. - Masataka Higashiwaki; Man Hoi Wong; Takafumi Kamimura; Yoshiaki Nakata; Chia-Hung Lin; Ravikiran Lingaparthi; Akinori Takeyama; Takahiro Makino; Takeshi Ohshima; Naoki Hatta; Kuniaki Yagi; Ken Goto; et al. (DRC, 2018)

1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes. - Wenshen Li; Kazuki Nomoto; Zongyang Hu; Nicholas Tanen; Kohei Sasaki; Akito Kuramata; Debdeep Jena; Huili Grace Xing (DRC, 2018)

Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier Diodes. - Akio Takatsuka; Kohei Sasaki; Daiki Wakimoto; Quang Tu Thieu; Yuki Koishikawa; Jun Arima; Jun Hirabayashi; Daisuke Inokuchi; Yoshiaki Fukumitsu; Akito Kuramata; Shigenobu Yamakoshi (DRC, 2018)

Operation Up to 600K of Vertical β-Ga2O3 Schottky Rectifier With 754V Reverse Breakdown Voltage. - Xinyi Xia; Minghan Xian; Patrick Carey; Chaker Fares; Fan Ren; Marko J. Tadjer; Steve J. Pearton; Thieu Quang Tu; Ken Goto; Akito Kuramata (DRC, 2021)

AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. - James Spencer Lundh; Hannah N. Masten; Kohei Sasaki; Alan G. Jacobs; Zhe Cheng; Joseph Spencer; Lei Chen; James C. Gallagher; Andrew D. Koehler; Keita Konishi; Samuel Graham; Akito Kuramata; et al. (DRC, 2022)