Gate-controlled field-effect diodes and silicon-controlled rectifier for charged-device model ESD protection in advanced SOI technology. - Shuqing Cao; Jung-Hoon Chun; Akram A. Salman; Stephen G. Beebe; Robert W. Dutton (Microelectron. Reliab., 2011)

Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique. - Akram A. Salman; Farzan Farbiz; Ann Concannon; Hal Edwards; Gianluca Boselli (Microelectron. Reliab., 2016)

Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability. - Nagothu Karmel Kranthi; Boeila Sampath Kumar; Akram A. Salman; Gianluca Boselli; Mayank Shrivastava (IRPS, 2019)

Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior. - Nagothu Karmel Kranthi; Akram A. Salman; Gianluca Boselli; Mayank Shrivastava (IRPS, 2019)

How to Achieve Moving Current Filament in High Voltage LDMOS Devices: Physical Insights & Design Guidelines for Self-Protected Concepts. - Nagothu Karmel Kranthi; Chirag Garg; Boeila Sampath Kumar; Akram A. Salman; Gianluca Boselli; Mayank Shrivastava (IRPS, 2020)

Design Insights to Address Low Current ESD Failure and Power Scalability Issues in High Voltage LDMOS-SCR Devices. - Nagothu Karmel Kranthi; Boeila Sampath Kumar; Akram A. Salman; Gianluca Boselli; Mayank Shrivastava (IRPS, 2020)