GaAs P-HEMT MMIC processes behavior under multiple heavy ion radiation stress conditions combined with DC and RF biasing. - Alain Bensoussan 002; Ronan Marec; Jean Luc Muraro; L. Portal; Philippe Calvel; Catherine Barillot; Marie Genevieve Perichaud; Laurent Marchand; Gael Vignon (Microelectron. Reliab., 2013)

A methodologic project to characterize and model COTS component reliability. - André Durier; Alain Bensoussan 002; Moustafa Zerarka; Chaimae Ghfiri; Alexandre Boyer; Hélène Frémont (Microelectron. Reliab., 2015)

How to quantify and predict long term multiple stress operation: Application to Normally-Off Power GaN transistor technologies. - Alain Bensoussan 002 (Microelectron. Reliab., 2016)

Reliability prediction with MTOL. - Joseph B. Bernstein; Alain Bensoussan 002; Emmanuel Bender (Microelectron. Reliab., 2017)

Temperature and voltage effects on HTRB and HTGB stresses for AlGaN/GaN HEMTs. - Omar Chihani; Loic Théolier; Jean-Yves Delétage; Eric Woirgard; Alain Bensoussan 002; André Durier (IRPS, 2018)

Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. - Omar Chihani; L. Théolier; Alain Bensoussan 002; Jean-Yves Delétage; André Durier; Eric Woirgard (Microelectron. Reliab., 2018)

The Correct Hot Carrier Degradation Model. - Joseph B. Bernstein; Emmanuel Bender; Alain Bensoussan 002 (IRPS, 2023)