Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs. - Alain Bravaix; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2001)

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies. - Alain Bravaix; C. Trapes; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2003)

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides. - Alain Bravaix; Didier Goguenheim; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2004)

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. - Alain Bravaix; Didier Goguenheim; Mickael Denais; Vincent Huard; C. R. Parthasarathy; F. Perrier; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2005)

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies. - Didier Goguenheim; Alain Bravaix; S. Gomri; J. M. Moragues; C. Monserie; N. Legrand; Philippe Boivin (Microelectron. Reliab., 2005)

A thorough investigation of MOSFETs NBTI degradation. - Vincent Huard; Mickael Denais; F. Perrier; Nathalie Revil; C. R. Parthasarathy; Alain Bravaix; E. Vincent (Microelectron. Reliab., 2005)

Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology. - Yannick Rey-Tauriac; J. Badoc; B. Reynard; Raúl Andrés Bianchi; D. Lachenal; Alain Bravaix (Microelectron. Reliab., 2005)

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides. - C. Trapes; Didier Goguenheim; Alain Bravaix (Microelectron. Reliab., 2005)

Designing in reliability in advanced CMOS technologies. - C. R. Parthasarathy; Mickael Denais; Vincent Huard; G. Ribes; David Roy 001; Chloe Guérin; F. Perrier; E. Vincent; Alain Bravaix (Microelectron. Reliab., 2006)

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. - C. R. Parthasarathy; Alain Bravaix; Chloe Guérin; Mickael Denais; Vincent Huard (PATMOS, 2007)

Degradation mechanism understanding of NLDEMOS SOI in RF applications. - D. Lachenal; Alain Bravaix; Frederic Monsieur; Yannick Rey-Tauriac (Microelectron. Reliab., 2007)

Reliability aspects of gate oxide under ESD pulse stress. - Adrien Ille; Wolfgang Stadler; Thomas Pompl; Harald Gossner; Tilo Brodbeck; Kai Esmark; Philipp Riess; David Alvarez; Kiran V. Chatty; Robert Gauthier 002; Alain Bravaix (Microelectron. Reliab., 2009)

Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronics. - F. Molière; B. Foucher; Philippe Perdu; Alain Bravaix (Microelectron. Reliab., 2009)

Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Digital circuits reliability with in-situ monitors in 28nm fully depleted SOI. - M. Saliva; Florian Cacho; Vincent Huard; X. Federspiel; D. Angot; Ahmed Benhassain; Alain Bravaix; Lorena Anghel (DATE, 2015)

Impact of gate oxide breakdown in logic gates from 28nm FDSOI CMOS technology. - M. Saliva; Florian Cacho; Cheikh Ndiaye; Vincent Huard; D. Angot; Alain Bravaix; Lorena Anghel (IRPS, 2015)

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. - Alain Bravaix; M. Saliva; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Edith Kussener; E. Pauly; Vincent Huard (IOLTS, 2016)

Potentiality of healing techniques in hot-carrier damaged 28 nm FDSOI CMOS nodes. - Alain Bravaix; Florian Cacho; X. Federspiel; Cheikh Ndiaye; Souhir Mhira; Vincent Huard (Microelectron. Reliab., 2016)

Performance vs. reliability adaptive body bias scheme in 28 nm & 14 nm UTBB FDSOI nodes. - Cheikh Ndiaye; Vincent Huard; X. Federspiel; Florian Cacho; Alain Bravaix (Microelectron. Reliab., 2016)

Dynamic aging compensation and Safety measures in Automotive environment. - Souhir Mhira; Vincent Huard; Ahmed Benhassain; Florian Cacho; Sylvie Naudet; Abhishek Jain 003; C. R. Parthasarathy; Alain Bravaix (IOLTS, 2017)

Cognitive approach to support dynamic aging compensation. - Souhir Mhira; Vincent Huard; Ahmed Benhassain; Florian Cacho; David Meyer; Sylvie Naudet; Abhishek Jain 003; C. R. Parthasarathy; Alain Bravaix (ITC, 2017)

Enabling robust automotive electronic components in advanced CMOS nodes. - Vincent Huard; Souhir Mhira; Florian Cacho; Alain Bravaix (Microelectron. Reliab., 2017)

Managing electrical reliability in consumer systems for improved energy efficiency. - Vincent Huard; Souhir Mhira; A. Barclais; X. Lecocq; F. Raugi; M. Cantournet; Alain Bravaix (IRPS, 2018)

Key parameters driving transistor degradation in advanced strained SiGe channels. - Vincent Huard; Cheikh Ndiaye; M. Arabi; Narendra Parihar; X. Federspiel; Souhir Mhira; S. Mahapatra; Alain Bravaix (IRPS, 2018)

Resilient automotive products through process, temperature and aging compensation schemes. - Souhir Mhira; Vincent Huard; D. Arora; Philippe Flatresse; Alain Bravaix (IRPS, 2018)

Process Optimization for HCI Improvement in I/O Analog Devices. - Cheikh Diouf; N. Guitard; M. Rafik; J. J. Martinez; X. Federspiel; Alain Bravaix; D. Muller; David Roy 001 (IRPS, 2019)

Hot-Carrier induced Breakdown events from Off to On mode in NEDMOS. - Alain Bravaix; Edith Kussener; David Ney; Xavier Federspiel; Florian Cacho (IRPS, 2020)

Analysis of the interactions of HCD under "On" and "Off" state modes for 28nm FDSOI AC RF modelling. - Tidjani Garba-Seybou; Xavier Federspiel; Alain Bravaix; Florian Cacho (IRPS, 2021)

New Modelling Off-state TDDB for 130nm to 28nm CMOS nodes. - Tidjani Garba-Seybou; Xavier Federspiel; Alain Bravaix; Florian Cacho (IRPS, 2022)

Location of Oxide Breakdown Events under Off-state TDDB in 28nm N-MOSFETs dedicated to RF applications. - Tidjani Garba-Seybou; Xavier Federspiel; Frederic Monsieur; Mathieu Sicre; Florian Cacho; Joycelyn Hai; Alain Bravaix (IRPS, 2023)