Modelling of pseudomorphic AlGaAs/GaInAs/AlGaAs layers using selfconsistent approach. - Jocelyn Alamkan; Henri Happy; Yvon Cordier; Alain Cappy (Eur. Trans. Telecommun., 1990)

On the validity of a new extrinsic equivalent circuit including noise of HEMTs required for millimeter wave circuit design. - Gilles Dambrine; Jean-Maxence Belquin; Francis Danneville; Alain Cappy (Ann. des Télécommunications, 1997)

Hemt's capability for millimeter wave applications. - S. Bollaert; Yvon Cordier; M. Zaknoune; T. Parenty; Henri Happy; Alain Cappy (Ann. des Télécommunications, 2001)

Monte Carlo simulation of electronic characteristics in short channel δ-doped AlInAs/GaInAs HEMTs. - Javier Mateos; Tomás González; Daniel Pardo 004; Virginie Hoel; Alain Cappy (Microelectron. Reliab., 2001)