Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. - Liviu Militaru; A. Souifi; M. Mouis; Alain Chantre; G. Brémond (Microelectron. Reliab., 2001)

230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications. - Pascal Chevalier 002; Cyril Fellous; Laurent Rubaldo; Franck Pourchon; Sébastien Pruvost; Rudy Beerkens; Fabienne Saguin; Nicolas Zerounian; Benoît Barbalat; Sylvie Lépilliet; Didier Dutartre; Didier Céli; et al. (IEEE J. Solid State Circuits, 2005)

Design and Scaling of W-Band SiGe BiCMOS VCOs. - Sean T. Nicolson; Kenneth H. K. Yau; Pascal Chevalier 002; Alain Chantre; Bernard Sautreuil; Keith W. Tang; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2007)

Will BiCMOS stay competitive for mmW applications ? - Patrice Garcia; Alain Chantre; Sébastien Pruvost; Pascal Chevalier 002; Sean T. Nicolson; David Roy 001; Sorin P. Voinigescu; Christophe Garnier (CICC, 2008)

165-GHz Transceiver in SiGe Technology. - Ekaterina Laskin; Pascal Chevalier 002; Alain Chantre; Bernard Sautreuil; Sorin P. Voinigescu (IEEE J. Solid State Circuits, 2008)

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. - Stefaan Decoutere; Stefaan Van Huylenbroeck; Bernd Heinemann; Alexander Fox; Pascal Chevalier 002; Alain Chantre; Thomas F. Meister; Klaus Aufinger; Michael Schröter (CICC, 2009)

0.13µm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications. - Grégory Avenier; Malick Diop; Pascal Chevalier 002; Germaine Troillard; Nicolas Loubet; Julien Bouvier; Linda Depoyan; Nicolas Derrier; Michel Buczko; Cédric Leyris; Samuel Boret; Sébastien Montusclat; et al. (IEEE J. Solid State Circuits, 2009)

A Study of SiGe HBT Signal Sources in the 220-330-GHz Range. - Sorin P. Voinigescu; Alexander Tomkins; Eric Dacquay; Pascal Chevalier 002; Jürgen Hasch; Alain Chantre; Bernard Sautreuil (IEEE J. Solid State Circuits, 2013)