N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis. - Cédric Leyris; Frédéric Martinez; Alain Hoffmann; M. Valenza; J. C. Vildeuil (Microelectron. Reliab., 2007)

Random telegraph signal: A sensitive and nondestructive tool for gate oxide single trap characterization. - Cédric Leyris; Frédéric Martinez; M. Valenza; Alain Hoffmann; J. C. Vildeuil (Microelectron. Reliab., 2007)

Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistors. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (ESSDERC, 2014)

Dispersion study of DC and Low Frequency Noise in SiGe: C Heterojunction Bipolar Transistors used for mm-Wave to Terahertz applications. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (Microelectron. Reliab., 2014)

A complete compact model for flicker noise in MOS transistors. - Alfredo Arnaud; Alain Hoffmann (LASCAS, 2015)

Characterization, modeling and comparison of 1/f noise in Si/SiGe: C HBTs issued from three advanced BiCMOS technologies. - Marcelino Seif; Fabien Pascal; Bruno Sagnes; J. Elbeyrouthy; Alain Hoffmann; Sébastien Haendler; Pascal Chevalier 002; Daniel Gloria (ICM, 2017)