Transient device simulation of neutron-induced failure in IGBT: A first step for developing a compact predictive model. - K. Guetarni; Antoine D. Touboul; Jerome Boch; L. Foro; A. Privat; Alain Michez; J.-R. Vaillé; Frédéric Saigné (Microelectron. Reliab., 2013)

Modeling dose effects in electronics devices: Dose and temperature dependence of power MOSFET. - Alain Michez; Jerome Boch; S. Dhombres; Frédéric Saigné; Antoine D. Touboul; J.-R. Vaillé; Laurent Dusseau; E. Lorfèvre; R. Ecoffet (Microelectron. Reliab., 2013)

TCAD simulation of radiation-induced leakage current in 1T1C SDRAM. - Hoang T. Nguyen; Axel Rodriguez; Frederic Wrobel; Alain Michez; Francoise Bezerra; Nathalie Chatry; Benjamin Vandevelde (Microelectron. Reliab., 2018)

Evaluation and Analysis of Technologies for Robotic Platforms for the Nuclear Decommissioning. - Georgios Tsiligiannis; Antoine D. Touboul; Gaëtan Bricas; Tadec Maraine; Jerome Boch; Frederic Wrobel; Alain Michez; Frédéric Saigné; Alain Godot; Asenath Etile; Thibaud Durand; Romain Sueur; et al. (DTIS, 2020)

Multi-Partner Project: Twinning for Excellence in Reliable Electronics (TWIN-RELECT). - Marko S. Andjelkovic; Fabian Vargas 001; Milos Krstic; Luigi Dilillo; Alain Michez; Frederic Wrobel; Davide Bertozzi; Mikel Luján; Christos Georgakidis; Nikolaos Chatzivangelis; Katerina Tsilingiri; Nikolaos Zazatis; et al. (DATE, 2025)