3D monolithic integration. - Perrine Batude; Maud Vinet; Arnaud Pouydebasque; Cyrille Le Royer; Bernard Previtali; Claude Tabone; Jean-Michel Hartmann; Loic Sanchez; Laurence Baud; Veronique Carron; Alain Toffoli; Fabienne Allain; et al. (ISCAS, 2011)

Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption. - Quentin Hubert; Carine Jahan; Alain Toffoli; Gabriele Navarro; S. Chandrashekar; Pierre Noe; Veronique Sousa; Luca Perniola; J.-F. Nodin; A. Persico; S. Maitrejean; A. Roule; et al. (ESSDERC, 2012)

Ultra-Thin Body and Buried Oxide (UTBB) FDSOI Technology with Low Variability and Power Management Capability for 22 nm Node and Below. - J. Mazurier; Olivier Weber; François Andrieu; Alain Toffoli; Olivier Thomas; Fabienne Allain; Jean-Philippe Noel; Marc Belleville; Olivier Faynot; T. Poiroux (J. Low Power Electron., 2012)

A novel HfO2-GeS2-Ag based conductive bridge RAM for reconfigurable logic applications. - Giorgio Palma; Elisa Vianello; Olivier Thomas; Houcine Oucheikh; Santhosh Onkaraiah; Alain Toffoli; Catherine Carabasse; Gabriel Molas; Barbara De Salvo (ESSDERC, 2013)