Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron. - Arno Stockman; Michael J. Uren; Alaleh Tajalli; Matteo Meneghini; Benoit Bakeroot; Peter Moens (ESSDERC, 2017)

Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. - Alaleh Tajalli; Matteo Meneghini; Isabella Rossetto; Peter Moens; Abhishek Banerjee 003; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2017)

On the origin of the leakage current in p-gate AlGaN/GaN HEMTs. - Arno Stockman; Eleonora Canato; Alaleh Tajalli; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Peter Moens; Benoit Bakeroot (IRPS, 2018)

Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. - Alaleh Tajalli; Eleonora Canato; Arianna Nardo; Matteo Meneghini; Arno Stockman; Peter Moens; Enrico Zanoni; Gaudenzio Meneghesso (Microelectron. Reliab., 2018)