AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. - James Spencer Lundh; Hannah N. Masten; Kohei Sasaki; Alan G. Jacobs; Zhe Cheng; Joseph Spencer; Lei Chen; James C. Gallagher; Andrew D. Koehler; Keita Konishi; Samuel Graham; Akito Kuramata; et al. (DRC, 2022)