Microscopic scale characterization and modeling of transistor degradation under HC stress. - Yoann Mamy Randriamihaja; Vincent Huard; Xavier Federspiel; Alban Zaka; Pierpaolo Palestri; Denis Rideau; David Roy 001; Alain Bravaix (Microelectron. Reliab., 2012)

Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulation. - E. M. Bazizi; Alban Zaka; Tom Herrmann; Francis Benistant; J. H. M. Tin; J. P. Goh; L. Jiang; M. Joshi; H. van Meer; K. Korablev (ESSDERC, 2014)

Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

RTN and LFN Noise Performance in Advanced FDSOI Technology. - Luca Pirro; Olaf Zimmerhackl; Alban Zaka; Lars Müller-Meskamp; Ranjith Nelluri; Tom Hermann; Ignasi Cortes-Mayol; Andreas Huschka; Michael Otto 003; E. Nowak; Anurag Mittal; Jan Hoentschel (ESSDERC, 2018)

22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. - Zhixing Zhao; Patrick James Artz; Klaus Hempel; Juergen Faul; Tianbing Chen; Richard Taylor; Jerome Mazurier; Carsten Grass; Jan Hoentschel; David Harame; Steffen Lehmann; Luca Lucci; et al. (ESSDERC, 2019)

Low-Frequency Noise Reduction in 22FDX®: Impact of Device Geometry and Back Bias. - Luca Pirro; Alban Zaka; Olaf Zimmerhackl; T. Hermann; Michael Otto 003; E. M. Bazizi; Jan Hoentschel; X. Li; R. Taylor (IRPS, 2019)

Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology. - Kyong Jin Hwang; Sagar Premnath Karalkar; Vishal Ganesan; Sevashanmugam Marimuthu; Alban Zaka; Tom Herrmann; Bhoopendra Singh; Robert Gauthier 002 (IRPS, 2020)

Comparison of Analog and Noise Performance between Buried Channel versus Surface Devices in HKMG I/O Devices. - Luca Pirro; Aarthi Jayakumar; Olaf Zimmerhackl; Dieter Lipp; Ralf Illgen; Armin Muehlhoff; Ronny Pfuetzner; Alban Zaka; Michael Otto 003; Jan Hoentschel; Yannick Raffel; Konrad Seidel; et al. (IRPS, 2021)

Impact of Electrical Defects located at Transistor Periphery on Analog and RTN Device Performance. - Luca Pirro; P. Liebscher; C. Brantz; M. Kessler; H. Herzog; Olaf Zimmerhackl; R. Jain; E. Ebrand; K. Gebauer; Michael Otto 003; Alban Zaka; Jan Hoentschel (IRPS, 2022)

Monolithically Integrated High-Performance Ge-on-Si PIN Photodetectors with Nearly 60 GHz EO Bandwidth, 0.95 A/W Responsivity, <30 nA Dark Current and -36 dB Optical Return Loss Enabled by Ge Shape Optimization. - Yusheng Bian; Abdelsalam Aboketaf; Won Suk Lee; Sujith Chandran; Edgar Huante-Ceron; Arman Najafi; Ana Villafranca; Hatef Shiran; Judson Holt; Francis Afzal; Kevin K. Dezfulian; Michelle Zhang; et al. (OFC, 2025)