Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs. - Elena Atanassova; Albena Paskaleva (Microelectron. Reliab., 2002)

Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. - Albena Paskaleva; Martin Lemberger; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2003)

Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. - Martin Lemberger; Albena Paskaleva; Stefan Zürcher; Anton J. Bauer; Lothar Frey; Heiner Ryssel (Microelectron. Reliab., 2005)

Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films. - Albena Paskaleva; Anton J. Bauer; Martin Lemberger (Microelectron. Reliab., 2005)

Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs. - Elena Atanassova; Albena Paskaleva (Microelectron. Reliab., 2007)

Metal gates and gate-deposition-induced defects in Ta2O5 stack capacitors. - Elena Atanassova; Dencho Spassov; Albena Paskaleva (Microelectron. Reliab., 2007)

Polarity asymmetry of stress and charge trapping behavior of thin Hf- and Zr-silicate layers. - Albena Paskaleva; Martin Lemberger; Anton J. Bauer (Microelectron. Reliab., 2007)

Effects of the metal gate on the stress-induced traps in Ta2O5/SiO2 stacks. - Elena Atanassova; Albena Paskaleva; Nenad Novkovski (Microelectron. Reliab., 2008)

Degradation behavior of Ta2O5 stacks and its dependence on the gate electrode. - Elena Atanassova; Ninoslav Stojadinovic; Albena Paskaleva (Microelectron. Reliab., 2008)

Constant current stress-induced leakage current in mixed HfO2-Ta2O5 stacks. - Elena Atanassova; Nenad Novkovski; Albena Paskaleva; Dencho Spassov (Microelectron. Reliab., 2010)

Lightly Al-doped Ta2O5: Electrical properties and mechanisms of conductivity. - Dencho Spassov; Elena Atanassova; Albena Paskaleva (Microelectron. Reliab., 2011)

Doped Ta2O5 and mixed HfO2-Ta2O5 films for dynamic memories applications at the nanoscale. - Elena Atanassova; Albena Paskaleva; Dencho Spassov (Microelectron. Reliab., 2012)

Time-dependent-dielectric-breakdown characteristics of Hf-doped Ta2O5/SiO2 stack. - Elena Atanassova; Nenad Novkovski; Dencho Spassov; Albena Paskaleva; Aleksandar Skeparovski (Microelectron. Reliab., 2014)

A review of pulsed NBTI in P-channel power VDMOSFETs. - Danijel Dankovic; Ivica Manic; Aneta Prijic; Vojkan Davidovic; Zoran Prijic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Ninoslav Stojadinovic (Microelectron. Reliab., 2018)

Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. - Sandra Veljkovic; Nikola Mitrovic; Vojkan Davidovic; Snezana Golubovic; Snezana Djoric-Veljkovic; Albena Paskaleva; Dencho Spassov; Srboljub Stankovic; Marko S. Andjelkovic; Zoran Prijic; Ivica Manic; Aneta Prijic; et al. (J. Circuits Syst. Comput., 2022)