The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. - Francesco Velardi; Francesco Iannuzzo; Giovanni Busatto; Alberto Porzio; Annunziata Sanseverino; Giuseppe Currò; Alessandra Cascio; Ferruccio Frisina (Microelectron. Reliab., 2004)

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. - Giovanni Busatto; Alberto Porzio; Francesco Velardi; Francesco Iannuzzo; Annunziata Sanseverino; Giuseppe Currò (Microelectron. Reliab., 2005)

Experimental study of power MOSFET's gate damage in radiation environment. - Giovanni Busatto; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi; Giuseppe Currò (Microelectron. Reliab., 2006)

Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2008)

Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2009)

Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. - Giovanni Busatto; Giuseppe Currò; Francesco Iannuzzo; Alberto Porzio; Annunziata Sanseverino; Francesco Velardi (Microelectron. Reliab., 2010)

Continuous Variable Entanglement over Different Degree of Freedom for Entanglement Multiplexing. - Alberto Porzio; Adriana Pecoraro; Filippo Cardano; Lorenzo Marrucci (ICTON, 2019)