Understanding pulsed-cycling variability and endurance in HfOx RRAM. - Simone Balatti; Stefano Ambrogio; Zhongqiang Wang; Scott Sills; Alessandro Calderoni; Nirmal Ramaswamy; Daniele Ielmini (IRPS, 2015)

Challenges for high-density 16Gb ReRAM with 27nm technology. - Scott Sills; Shuichiro Yasuda; Alessandro Calderoni; Christopher Cardon; Jonathan Strand; Katsuhisa Aratani; Nirmal Ramaswamy (VLSIC, 2015)

Stochastic Learning in Neuromorphic Hardware via Spike Timing Dependent Plasticity With RRAM Synapses. - Giacomo Pedretti; Valerio Milo; Stefano Ambrogio; Roberto Carboni; Stefano Bianchi; Alessandro Calderoni; Nirmal Ramaswamy; Alessandro S. Spinelli; Daniele Ielmini (IEEE J. Emerg. Sel. Topics Circuits Syst., 2018)

A 4-Transistors/1-Resistor Hybrid Synapse Based on Resistive Switching Memory (RRAM) Capable of Spike-Rate-Dependent Plasticity (SRDP). - Valerio Milo; Giacomo Pedretti; Roberto Carboni; Alessandro Calderoni; Nirmal Ramaswamy; Stefano Ambrogio; Daniele Ielmini (IEEE Trans. Very Large Scale Integr. Syst., 2018)

Materials Engineering for High Performance Ferroelectric Memory. - Ashonita Chavan; Adharsh Rajagopal; Yixin Yan; Isamu Asano; Devanarayanan Ettisserry; Vassil Antonov; Giorgio Servalli; Alessandro Calderoni; Nirmal Ramaswamy (IMW, 2024)

Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAM. - Devanarayanan Ettisserry; Angelo Visconti; Mauro Bonanomi; Riccardo Pazzocco; Andrea Locatelli; Alessandro Sebastiani; Ashonita Chavan; Matthew Hollander; Giorgio Servalli; Alessandro Calderoni; Nirmal Ramaswamy (IRPS, 2024)

4F2 Stackable Polysilicon Channel Access Device for Ultra-Dense NVDRAM. - A. Liao; M. Jerry; K. Karda; Matthew Hollander; P. Sharma; R. Ge; T. Zhao; G. K. El Hajjam; M. Mariani; M. Calabrese; D. Raimondi; A. Rigano; et al. (VLSI Technology and Circuits, 2024)