DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues. - Giovanni Verzellesi; Gaudenzio Meneghesso; Alessandro Chini; Enrico Zanoni; Claudio Canali (Microelectron. Reliab., 2005)

Experimental and simulated dc degradation of GaN HEMTs by means of gate-drain and gate-source reverse bias stress. - Valerio Di Lecce; Michele Esposto; Matteo Bonaiuti; Gaudenzio Meneghesso; Enrico Zanoni; Fausto Fantini; Alessandro Chini (Microelectron. Reliab., 2010)

Field plate related reliability improvements in GaN-on-Si HEMTs. - Alessandro Chini; Fabio Soci; Fausto Fantini; Antonio Nanni; Alessio Pantellini; Claudio Lanzieri; Davide Bisi; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2012)

Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs. - Alessandro Chini; Fabio Soci; Fausto Fantini; A. Nanni; A. Pantellini; Claudio Lanzieri; Gaudenzio Meneghesso; Enrico Zanoni (Microelectron. Reliab., 2013)

Reliability Investigation of GaN HEMTs for MMICs Applications. - Alessandro Chini; Gaudenzio Meneghesso; Alessio Pantellini; Claudio Lanzieri; Enrico Zanoni (Micromachines, 2014)

Traps localization and analysis in GaN HEMTs. - Alessandro Chini; Fabio Soci; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (Microelectron. Reliab., 2014)

Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. - Davide Bisi; Antonio Stocco; Isabella Rossetto; Matteo Meneghini; Fabiana Rampazzo; Alessandro Chini; Fabio Soci; Alessio Pantellini; Claudio Lanzieri; Piero Gamarra; Cedric Lacam; M. Tordjman; et al. (Microelectron. Reliab., 2015)

A novel GaN HEMT degradation mechanism observed during HTST test. - Ferdinando Iucolano; Antonino Maurizio Parisi; Santo Reina; Alessandro Chini (IRPS, 2018)

On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. - Mehdi Rzin; Alessandro Chini; Carlo De Santi; Matteo Meneghini; A. Hugger; Marc Hollmer; H. Stieglauer; M. Madel; J. Splettstößer; Daniel Sommer; Jan Grünenpütt; K. Beilenhoff; et al. (Microelectron. Reliab., 2018)

Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs. - Nicolò Zagni; Alessandro Chini; Francesco Maria Puglisi; Paolo Pavan; Matteo Meneghini; Gaudenzio Meneghesso; Enrico Zanoni; Giovanni Verzellesi (IRPS, 2020)

Investigation on VTH and RON Slow/Fast Drifts in SiC MOSFETs. - Marcello Cioni; Alessandro Bertacchini; Alessandro Mucci; Giovanni Verzellesi; Paolo Pavan; Alessandro Chini (IRPS, 2021)

A Novel Temperature Estimation Technique Exploiting Carrier Emission from Buffer Traps. - Marcello Cioni; Nicolò Zagni; Alessandro Chini (ESSDERC, 2022)

Identification of Interface States responsible for VTH Hysteresis in packaged SiC MOSFETs. - Marcello Cioni; Patrick Fiorenza; Fabrizio Roccaforte; Mario Saggio; Salvatore Cascino; Angelo Alberto Messina; Vincenzo Vinciguerra; Michele Calabretta; Alessandro Chini (IRPS, 2022)

Fe-Traps Influence on Time-dependent Breakdown Voltage in 0.1-μm GaN HEMTs for 5G Applications. - Marcello Cioni; Nicolò Zagni; Alessandro Chini (IRPS, 2022)

Evidence of Carbon Doping Effect on VTH Drift and Dynamic-RON of 100V p-GaN Gate AlGaN/GaN HEMTs. - Marcello Cioni; G. Giorgino; Alessandro Chini; Carmine Miccoli; Maria Eloisa Castagna; M. Moschetti; C. Tringali; Ferdinando Iucolano (IRPS, 2023)