Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. - Romain Ritzenthaler; Tom Schram; Erik Bury; Jérôme Mitard; L.-Å. Ragnarsson; Guido Groeseneken; N. Horiguchi; Aaron Thean; Alessio Spessot; Christian Caillat; V. Srividya; Pierre Fazan (ESSDERC, 2012)

Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. - Marc Aoulaiche; Eddy Simoen; Romain Ritzenthaler; Tom Schram; Hiroaki Arimura; Moonju Cho; Thomas Kauerauf; Guido Groeseneken; Naoto Horiguchi; Aaron Thean; Antonio Federico; Felice Crupi; et al. (ESSDERC, 2013)

Impact of Off State Stress on advanced high-K metal gate NMOSFETs. - Alessio Spessot; Marc Aoulaiche; Moonju Cho; Jacopo Franco; Tom Schram; Romain Ritzenthaler; Ben Kaczer (ESSDERC, 2014)

Off-state stress degradation mechanism on advanced p-MOSFETs. - Moonju Cho; Alessio Spessot; Ben Kaczer; Marc Aoulaiche; Romain Ritzenthaler; Tom Schram; Pierre Fazan; Naoto Horiguchi; Dimitri Linten (ICICDT, 2015)

I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. - Romain Ritzenthaler; Tom Schram; M. J. Cho; Anda Mocuta; Naoto Horiguchi; Aaron Voon-Yew Thean; Alessio Spessot; Christian Caillat; Marc Aoulaiche; Pierre Fazan; K. B. Noh; Y. Son (ICICDT, 2015)

Assessment of SiGe quantum well transistors for DRAM peripheral applications. - Romain Ritzenthaler; Tom Schram; Geert Eneman; Anda Mocuta; Naoto Horiguchi; Aaron Voon-Yew Thean; Alessio Spessot; Marc Aoulaiche; Pierre Fazan; K. B. Noh; Y. Son (ICICDT, 2015)

Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs. - Alessio Spessot; Romain Ritzenthaler; Tom Schram; Marc Aoulaiche; Moonju Cho; Maria Toledano-Luque; Naoto Horiguchi; Pierre Fazan (ICICDT, 2015)

Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7. - Mohit Kumar Gupta 001; Pieter Weckx; Stefan Cosemans; Pieter Schuddinck; Rogier Baert; Dmitry Yakimets; Doyoung Jang; Yasser Sherazi; Praveen Raghavan; Alessio Spessot; Anda Mocuta; Wim Dehaene (ESSDERC, 2017)

Dedicated technology threshold voltage tuning for 6T SRAM beyond N7. - Mohit Kumar Gupta 001; Pieter Weckx; Stefan Cosemans; Pieter Schuddinck; Rogier Baert; Doyoung Jang; Yasser Sherazi; Praveen Raghavan; Alessio Spessot; Anda Mocuta; Wim Dehaene (ICICDT, 2017)

SRAM designs for 5nm node and beyond: Opportunities and challenges. - Trong Huynh Bao; Sushil Sakhare; Julien Ryckaert; Alessio Spessot; Diederik Verkest; Anda Mocuta (ICICDT, 2017)

Process, Circuit and System Co-optimization of Wafer Level Co-Integrated FinFET with Vertical Nanosheet Selector for STT-MRAM Applications. - Trong Huynh Bao; Anabela Veloso; Sushil Sakhare; Philippe Matagne; Julien Ryckaert; Manu Perumkunnil; Davide Crotti; Farrukh Yasin; Alessio Spessot; Arnaud Furnémont; Gouri Sankar Kar; Anda Mocuta (DAC, 2019)

Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. - Barry J. O'Sullivan; Romain Ritzenthaler; Gerhard Rzepa; Z. Wu; E. Dentoni Litta; O. Richard; T. Conard; V. Machkaoutsan; Pierre Fazan; C. Kim; Jacopo Franco; Ben Kaczer; et al. (IRPS, 2019)

Device Scaling roadmap and its implications for Logic and Analog platform. - Alessio Spessot; Bertrand Parvais; Amita Rawat; Kenichi Miyaguchi; Pieter Weckx; Doyoung Jang; Julien Ryckaert (BCICTS, 2020)

Relevance of fin dimensions and high-pressure anneals on hot-carrier degradation. - Adrian Vaisman Chasin; Jacopo Franco; Erik Bury; Romain Ritzenthaler; Eugenio Dentoni Litta; Alessio Spessot; Naoto Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2020)

Fast & Accurate Methodology for Aging Incorporation in Circuits using Adaptive Waveform Splitting (AWS). - Subrat Mishra; Pieter Weckx; Ji-Yung Lin; Ben Kaczer; Dimitri Linten; Alessio Spessot; Francky Catthoor (IRPS, 2020)

Overhead Reduction with Optimal Margining Using A Reliability Aware Design Paradigm. - Subrat Mishra; Pieter Weckx; Odysseas Zografos; Ji-Yung Lin; Alessio Spessot; Francky Catthoor (IRPS, 2021)

Proactive Run-Time Mitigation for Time-Critical Applications Using Dynamic Scenario Methodology. - Ji-Yung Lin; Pieter Weckx; Subrat Mishra; Alessio Spessot; Francky Catthoor (DATE, 2022)

Thermally stable, packaged aware LV HKMG platforms benchmark to enable low power I/O for next 3D NAND generations. - Alessio Spessot; Shairfe Muhammad Salahuddin; Ricardo Escobar; Romain Ritzenthaler; Yang Xiang; Rahul Budhwani; Eugenio Dentoni Litta; Elena Capogreco; Joao P. Bastos; Yangyin Chen; Naoto Horiguchi (IMW, 2022)

Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. - J. P. Bastos; Barry J. O'Sullivan; Jacopo Franco; Stanislav Tyaginov; Brecht Truijen; Adrian Vaisman Chasin; Robin Degraeve; Ben Kaczer; Romain Ritzenthaler; Elena Capogreco; E. Dentoni Litta; Alessio Spessot; et al. (IRPS, 2022)

High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. - Romain Ritzenthaler; Elena Capogreco; E. Dupuy; Hiroaki Arimura; J. P. Bastos; P. Favia; F. Sebaai; D. Radisic; V. T. H. Nguyen; G. Mannaert; B. T. Chan; V. Machkaoutsan; et al. (VLSI Technology and Circuits, 2022)

Multitimescale Mitigation for Performance Variability Improvement in Time-Critical Systems. - Ji-Yung Lin; Pieter Weckx; Subrat Mishra; Alessio Spessot; Francky Catthoor (IEEE Trans. Very Large Scale Integr. Syst., 2022)

Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. - J. P. Bastos; Barry J. O'Sullivan; Yusuke Higashi; Adrian Vaisman Chasin; Jacopo Franco; Hiroaki Arimura; J. Ganguly; Elena Capogreco; Alessio Spessot; N. Horiguchi (IRPS, 2024)

DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM. - J. Ganguly; Hiroaki Arimura; Romain Ritzenthaler; H. Bana; J. W. Maes; J. G. Lai; S. Brus; W. Maqsood; R. Sarkar; B. Kannan; Elena Capogreco; V. Machkaoutsan; et al. (VLSI Technology and Circuits, 2024)

Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. - J. P. Bastos; Jacopo Franco; Barry J. O'Sullivan; Yusuke Higashi; Adrian Chasin; J. Ganguly; Hiroaki Arimura; Alessio Spessot; M.-S. Kim; N. Horiguchi (IRPS, 2025)