Achieving 1-nm-Scale Equivalent Oxide Thickness Top Gate Dielectric on Monolayer Transition Metal Dichalcogenide Transistors with CMOS-Friendly Approaches. - Jung-Soo Ko; Alex Shearer; Sol Lee; Kathryn M. Neilson; Marc Jaikissoon; Kwanpyo Kim; Stacey Bent; Krishna Saraswat; Eric Pop (VLSI Technology and Circuits, 2024)