Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)