Cost-effective integration of an FN-programmed embedded flash memory into a 0.25mum SiGe: C RF-BiCMOS technology. - Alexander Fox; K. E. Ehwald; Peter Schley; Rainer Barth; Steffen Marschmeyer; C. Wolf; V. E. Stikanov; A. Gromovyy; A. Hudyryev (Microelectron. J., 2006)

Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. - Stefaan Decoutere; Stefaan Van Huylenbroeck; Bernd Heinemann; Alexander Fox; Pascal Chevalier 002; Alain Chantre; Thomas F. Meister; Klaus Aufinger; Michael Schröter (CICC, 2009)

A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. - Holger Rücker; Bernd Heinemann; Wolfgang Winkler; Rainer Barth; Johannes Borngräber; Jürgen Drews; Gerhard G. Fischer; Alexander Fox; Thomas Grabolla; Ulrich Haak; Dieter Knoll; Falk Korndörfer; et al. (IEEE J. Solid State Circuits, 2010)

Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technology. - Andreas Mai; Alexander Fox (ESSDERC, 2015)

Ultra sensitive measurement of dielectric current under pulsed stress conditions. - Clemens Helfmeier; Anne Beyreuther; Alexander Fox; Christian Boit (Microelectron. Reliab., 2015)

Revolutionizing Student Engagement and Enrollment through Personalized, AI-Driven Dialog Systems in Higher Education. - Alexander Fox; Joshua Stoner; Jingwen Wang (SIGCSE (2), 2024)