QM/MM method for metal-organic interfaces. - Maria L. Sushko; Peter V. Sushko; Igor V. Abarenkov; Alexander L. Shluger (J. Comput. Chem., 2010)

On the volatility of oxide defects: Activation, deactivation, and transformation. - Tibor Grasser; M. Wahl; Wolfgang Goes; Yannick Wimmer; Al-Moatasem El-Sayed; Alexander L. Shluger; Ben Kaczer (IRPS, 2015)

Efficient parametrization of complex molecule-surface force fields. - David Z. Gao; Filippo Federici Canova; Matthew B. Watkins; Alexander L. Shluger (J. Comput. Chem., 2015)

Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. - David Z. Gao; Jack Strand; Al-Moatasem El-Sayed; Alexander L. Shluger; Andrea Padovani; Luca Larcher (IRPS, 2018)

Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. - Wolfgang Goes; Yannick Wimmer; Al-Moatasem El-Sayed; Gerhard Rzepa; Markus Jech; Alexander L. Shluger; Tibor Grasser (Microelectron. Reliab., 2018)

Mitigating switching variability in carbon nanotube memristors. - James Farmer; William Whitehead; Andrew Hall; Dmitry Veksler; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; et al. (IRPS, 2021)

Variability sources and reliability of 3D - FeFETs. - Milan Pesic; Bastien Beltrando; Andrea Padovani; Shruba Gangopadhyay; Muthukumar Kaliappan; Michael Haverty; Marco A. Villena; Enrico Piccinini; Matteo Bertocchi; Tony Chiang; Luca Larcher; Jack Strand; et al. (IRPS, 2021)

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. - Milan Pesic; Andrea Padovani; Tommaso Rollo; Bastien Beltrando; Jack Strand; Parnika Agrawal; Alexander L. Shluger; Luca Larcher (IMW, 2022)

Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. - James Farmer; Dmitry Veksler; E. Tang; Gennadi Bersuker; David Z. Gao; Al-Moatasem El-Sayed; Thomas Durrant; Alexander L. Shluger; Thomas Rueckes; Lee Cleveland; Harry Luan; Rahul Sen (IRPS, 2022)

Defining the performance of SiOx ReRAM by engineering oxide microstructure. - Anthony J. Kenyon; Adnan Mehonic; Wing H. Ng; Longfei Zhao; Horatio Cox; Mark Buckwell; Kamal Patel; Andrew P. Knights; Daniel J. Mannion; Alexander L. Shluger (MOCAST, 2022)

Hydrogen Induced Dipole Layer in Pd-SiO2 Based Gas Sensors. - Idan Shem Tov; Anwesha Mukherjee; Joseph Hayon; Laura Hargreaves; Alexander L. Shluger; Yossi Rosenwaks (SAS, 2022)

Towards a Universal Model of Dielectric Breakdown. - Andrea Padovani; Paolo La Torraca; Jack Strand; Alexander L. Shluger; Valerio Milo; Luca Larcher (IRPS, 2023)